RJP65T54DPM-E0#T2
IGBT TRENCH TO-3FPManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation IGBT Trench, part number RJP65T54DPM-E0-T2, is a high-performance power semiconductor designed for demanding switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 60 A, with a pulsed capability of 225 A. The Trench IGBT technology ensures efficient switching characteristics, evidenced by switching energies of 330 µJ (turn-on) and 760 µJ (turn-off) at the specified test conditions (400V, 30A, 10O, 15V). The on-state voltage drop is a maximum of 1.68V at 15V gate-emitter voltage and 30A collector current. With a maximum power dissipation of 63.5 W and an operating junction temperature of 175°C, this device is suitable for high-reliability power systems. It is supplied in a TO-3PFM (SC-93-3) package, designed for through-hole mounting, with packaging in tubes. Applications include industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.68V @ 15V, 30A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 35ns/120ns |
| Switching Energy | 330µJ (on), 760µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 72 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 63.5 W |
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