RJP60F5DPM-00#T1
IGBT TRENCH 600V 80A TO3PFMManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJP60F5DPM-00-T1 is a Trench IGBT with a 600 V collector-emitter breakdown voltage and a maximum collector current of 80 A. This device features a low on-state voltage of 1.8V at 15V gate-emitter voltage and 40A collector current, with typical switching times of 53ns turn-on and 90ns turn-off under test conditions of 400V, 30A, 5 Ohm load, and 15V gate drive. The RJP60F5DPM-00-T1 offers a maximum power dissipation of 45 W and a gate charge of 74 nC. It is supplied in a TO-3PFM package for through-hole mounting, suitable for demanding applications in power conversion and motor control. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A |
| Supplier Device Package | TO-3PFM |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 53ns/90ns |
| Switching Energy | - |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Gate Charge | 74 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 45 W |
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