RJP43F4ADPP-MB#T2F
IGBT 430V, 40A FOR PLASMA TVManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJP43F4ADPP-MB-T2F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a robust 430V breakdown voltage and a 40A continuous collector current rating, making it suitable for power switching in high-power systems. Its advanced trench field-stop structure ensures excellent switching characteristics and low conduction losses, crucial for efficiency in power conversion. This IGBT is particularly recognized for its application in plasma display panel (PDP) televisions, contributing to the high-voltage switching required for pixel illumination. The RJP43F4ADPP-MB-T2F is supplied in bulk packaging, ideal for high-volume manufacturing environments.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
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