RJP43F4ADPP-90#T2F
IGBT 430V, 40A FOR PLASMA TVManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
Quality Control: Learn More
Renesas Electronics Corporation RJP43F4ADPP-90-T2F is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This discrete power semiconductor features a robust 430V breakdown voltage and a continuous collector current rating of 40A, making it suitable for high-power switching. Its optimized design ensures efficient operation in power conversion circuits, particularly within the plasma display panel market due to its association with plasma TV technology. The RJP43F4ADPP-90-T2F is delivered in bulk packaging, aligning with high-volume production requirements. This component is integral to power management solutions across various industrial and consumer electronics sectors where reliable and efficient high-voltage switching is critical.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
Request a Quote
Clients Also Buy
RJH60T04DPQ-A1#T0
IGBT TRENCH 600V 60A TO247A
RJP5001APP-M0#T2
IGBT 500V TO220FL
RJH65D27BDPQ-A0#T0
IGBT 650V
