RJP4009ANS-01#Q6
IGBT 400VManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJP4009ANS-01-Q6 is a 400V Insulated Gate Bipolar Transistor (IGBT) designed for surface mount applications. This component offers a maximum collector-emitter voltage of 400V and a pulsed collector current (Icm) of 150A. The device features a standard input type and is housed in an 8-VSON (3x4.4) package, compatible with tube packaging. With a maximum power dissipation of 1.8W, it operates effectively within an ambient temperature range of -40°C to 150°C (TJ). The on-state voltage (Vce(on)) is specified at 9V when driven by 2.5V with a collector current of 150A. This IGBT is suitable for use in power supply units, industrial motor drives, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-VDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 9V @ 2.5V, 150A |
| Supplier Device Package | 8-VSON (3x4.4) |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 1.8 W |
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