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RJH65T04BDPMA0#T2F

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RJH65T04BDPMA0#T2F

IGBT TRENCH 650V 60A TO3PFP

Manufacturer: Renesas Electronics Corporation

Categories: Single IGBTs

Quality Control: Learn More

Renesas Electronics Corporation's RJH65T04BDPMA0-T2F is a Trench IGBT with a 650 V collector-emitter breakdown voltage and a continuous collector current of 60 A. This component, packaged in a TO-3PFP (SC-94) through-hole configuration, offers a maximum power dissipation of 65 W. Key electrical characteristics include a gate charge of 74 nC, a typical on-state voltage Vce(on) of 1.95 V at 15 V gate drive and 30 A collector current, and switching energies of 360 µJ (on) and 350 µJ (off) under test conditions of 400 V, 30 A, 10 Ohm, 15 V. The device operates at junction temperatures up to 175°C. This high-performance IGBT is suitable for power conversion applications within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSC-94
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)80 ns
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 30A
Supplier Device PackageTO-3PFP
IGBT TypeTrench
Td (on/off) @ 25°C35ns/125ns
Switching Energy360µJ (on), 350µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge74 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Power - Max65 W

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