RJH65T04BDPM-A0#T2
IGBT TRENCH 650V 60A TO3PFPManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJH65T04BDPM-A0-T2 is a Trench Insulated Gate Bipolar Transistor (IGBT) with a maximum collector emitter breakdown voltage of 650 V and a continuous collector current (Ic) of 60 A. This TO-3PFP packaged device operates at a maximum junction temperature of 175°C and dissipates up to 65 W. Key parameters include a gate charge of 74 nC and a typical on-state voltage (Vce(on)) of 1.95 V at 15 V gate voltage and 30 A collector current, based on a test condition of 400 V, 30 A, 10 Ohm, 15 V. Switching characteristics are defined by a reverse recovery time (trr) of 80 ns and switching energies of 360 µJ (on) and 350 µJ (off), with turn-on and turn-off delays (Td) of 35 ns and 125 ns respectively at 25°C. This component is suitable for applications in industrial power supplies, motor control, and renewable energy systems. The device is supplied in a Tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SC-94 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 30A |
| Supplier Device Package | TO-3PFP |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 35ns/125ns |
| Switching Energy | 360µJ (on), 350µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 74 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 65 W |
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