RJH60A85RDPE-00#J3
IGBT 600V 30A 113W LDPAKManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJH60A85RDPE-00-J3 is a Trench Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current of 30 A, with a maximum power dissipation of 113 W. The device is housed in an LDPAK (SC-83) surface-mount package, supplied on tape and reel. Key electrical characteristics include a VCE(on) of 1.8 V at 15 V VGE and 15 A Ic, a gate charge of 56 nC, and switching energies of 430 µJ (on) and 300 µJ (off) under specified test conditions (300 V, 15 A, 5 Ohm, 15 V). The typical turn-on delay is 40 ns and turn-off delay is 86 ns at 25°C. This IGBT is suitable for use in power conversion systems in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-83 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 160 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 15A |
| Supplier Device Package | LDPAK |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 40ns/86ns |
| Switching Energy | 430µJ (on), 300µJ (off) |
| Test Condition | 300V, 15A, 5Ohm, 15V |
| Gate Charge | 56 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 113 W |
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