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RJH1CV7DPQ-E0#T2

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RJH1CV7DPQ-E0#T2

IGBT TRENCH 1200V 70A TO247

Manufacturer: Renesas Electronics Corporation

Categories: Single IGBTs

Quality Control: Learn More

Renesas Electronics Corporation RJH1CV7DPQ-E0-T2 is a Trench IGBT with a 1200 V collector-emitter breakdown voltage and a maximum collector current of 70 A. This component is rated for 320 W maximum power dissipation. Key characteristics include a Vce(on) of 2.3 V at 15 V gate voltage and 35 A collector current, with a gate charge of 166 nC. Switching characteristics are detailed with switching energy of 3.2mJ (on) and 2.5mJ (off), and typical turn-on and turn-off delays of 53 ns and 185 ns respectively at 25°C, tested under 600V, 35A, 5 Ohm, 15V conditions. The RJH1CV7DPQ-E0-T2 features a reverse recovery time of 200 ns and operates at a maximum junction temperature of 150°C. Packaged in a TO-247-3 through-hole configuration, this device is suitable for applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)200 ns
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 35A
Supplier Device PackageTO-247
IGBT TypeTrench
Td (on/off) @ 25°C53ns/185ns
Switching Energy3.2mJ (on), 2.5mJ (off)
Test Condition600V, 35A, 5Ohm, 15V
Gate Charge166 nC
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max320 W

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