RJH1CV6DPK-00#T0
IGBT TRENCH 1200V 60A TO3PManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJH1CV6DPK-00-T0 is a Trench IGBT component designed for high-voltage, high-current applications. This device features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 60A, with a maximum power dissipation of 290W. The RJH1CV6DPK-00-T0 exhibits a low on-state voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 30A collector current. Key switching characteristics include a gate charge of 105 nC and switching energies of 2.3mJ (on) and 1.7mJ (off) under specified test conditions (600V, 30A, 5 Ohm, 15V). The component is housed in a TO-3P package suitable for through-hole mounting and operates at an ambient temperature up to 150°C. This IGBT is utilized in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 180 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 46ns/125ns |
| Switching Energy | 2.3mJ (on), 1.7mJ (off) |
| Test Condition | 600V, 30A, 5Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 290 W |
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