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RJH1CV5DPK-00#T0

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RJH1CV5DPK-00#T0

IGBT TRENCH 1200V 50A TO3P

Manufacturer: Renesas Electronics Corporation

Categories: Single IGBTs

Quality Control: Learn More

Renesas Electronics Corporation RJH1CV5DPK-00-T0 is a Trench IGBT designed for high-voltage, medium-current applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 50 A. The RJH1CV5DPK-00-T0 offers a maximum power dissipation of 245 W and a low on-state voltage of 2.6 V at 15 V gate-emitter voltage and 25 A collector current. Key switching characteristics include a gate charge of 72 nC, with typical turn-on delay (Td(on)) of 42 ns and turn-off delay (Td(off)) of 105 ns at 25°C. Reverse recovery time (trr) is rated at 170 ns. The RJH1CV5DPK-00-T0 is packaged in a TO-3P (TO-3P-3, SC-65-3) through-hole configuration, suitable for demanding power conversion and control systems across industries such as industrial automation and power supplies. Operating temperature is specified up to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)170 ns
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 25A
Supplier Device PackageTO-3P
IGBT TypeTrench
Td (on/off) @ 25°C42ns/105ns
Switching Energy1.9mJ (on), 1.5mJ (off)
Test Condition600V, 25A, 5Ohm, 15V
Gate Charge72 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max245 W

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