RJH1CF6RDPQ-80#T2
IGBT 1200V 55A 227.2W TO247Manufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation RJH1CF6RDPQ-80-T2 is a 1200V, 55A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 227.2W. This component features a standard input type and is housed in a TO-247 package, designed for through-hole mounting. The collector-emitter voltage (Vce(on)) is specified at 2.3V at 15V gate-emitter voltage and 30A collector current. It is rated for a maximum operating temperature of 150°C (TJ). This device is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 55 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 227.2 W |