CT60AM-18F#G02
N-CHANNEL IGBT, 900V, 60AManufacturer: Renesas Electronics Corporation
Categories: Single IGBTs
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Renesas Electronics Corporation CT60AM-18F-G02 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a robust 900V breakdown voltage and a continuous collector current rating of 60A, making it suitable for power factor correction circuits, motor control, and industrial power supplies. Its advanced trench field-stop cell structure minimizes conduction and switching losses, contributing to improved system efficiency. The CT60AM-18F-G02 is supplied in Bulk packaging, ideal for high-volume manufacturing processes. This IGBT is a reliable choice for applications in the industrial, automotive, and renewable energy sectors where robust power handling and efficiency are critical.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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