UPA653TT-E1-A
MOSFET P-CH 30V 2.5A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation UPA653TT-E1-A is a P-Channel MOSFET designed for power management applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 2.5A at 25°C (Ta). The low on-resistance of 165mOhm is specified at 1.5A drain current and 10V gate-source voltage. Key parameters include a gate charge of 3.4 nC (max) and input capacitance of 175 pF (max) at 10V. The threshold voltage is 2.5V (max) at 1mA. This MOSFET is supplied in a compact 6-WSOF (Surface Mount) package and is available in bulk packaging. Its characteristics make it suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 1.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 10 V |
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