UPA652TT-E1-A
MOSFET P-CH 20V 2A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA652TT-E1-A is a P-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2A at 25°C. The UPA652TT-E1-A offers a low Rds(On) of 294mOhm at 1A, 4.5V, ensuring efficient power delivery. With a Gate Charge (Qg) of 1.1 nC at 4V and Input Capacitance (Ciss) of 126 pF at 10V, it is suitable for various switching applications. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. This component is housed in a compact 6-WSOF (Surface Mount 6-pin, Flat Leads) package, ideal for space-constrained designs. The UPA652TT-E1-A finds application in power management, battery protection circuits, and general-purpose switching within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 294mOhm @ 1A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 126 pF @ 10 V |
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