UPA651TT-E1-A
MOSFET P-CH 20V 5A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation UPA651TT-E1-A is a P-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5A at 25°C. The on-resistance (Rds On) is specified at 69mOhm maximum at 2.5A and 4.5V gate-source voltage. With a maximum power dissipation of 200mW (Ta) and an operating temperature range up to 150°C (TJ), this device is suitable for demanding environments. Key characteristics include an input capacitance (Ciss) of 600pF maximum at 10V and a gate charge (Qg) of 5.5nC maximum at 4V. The UPA651TT-E1-A is supplied in a 6-WSOF package, often utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
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