UPA650TT-E1-A
MOSFET P-CH 12V 5A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation P-Channel MOSFET, part number UPA650TT-E1-A. This device features a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. The on-resistance (Rds On) is a maximum of 50mOhm at 2.5A, 4.5V. Key parameters include a gate charge (Qg) of 5.5 nC (max) at 10V and input capacitance (Ciss) of 610 pF (max) at 10V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA. This MOSFET is designed for surface mounting, housed in a 6-WSOF package. It offers a maximum power dissipation of 200mW (Ta) and an operating junction temperature of up to 150°C. Applications include power management in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
HAT2173HWS-E
MOSFET N-CH 100V 25A 5LFPAK
NP40N10YDF-E1-AY
MOSFET N-CH 100V 40A 8HSON
