UPA622TT-E1-A
MOSFET N-CH 30V 3A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation UPA622TT-E1-A is an N-Channel MOSFET designed for power control applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3A at 25°C. The on-resistance (Rds On) is a maximum of 82mOhm at 1.5A and 10V gate-source voltage. With a gate charge (Qg) of 3.8nC maximum at 10V and input capacitance (Ciss) of 155pF maximum at 10V, it offers efficient switching characteristics. The device has a maximum power dissipation of 200mW and an operating junction temperature of 150°C. Packaged in a 6-WSOF (6-SMD, Flat Leads) for surface mounting, this MOSFET is suitable for use in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 155 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
