UPA621TT-E1-A
MOSFET N-CH 20V 5A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA621TT-E1-A is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (Id) of 5A at 25°C. The UPA621TT-E1-A offers a low on-resistance of 50mOhm maximum at 2.5A and 4.5V Vgs, contributing to reduced conduction losses. Key parameters include a Gate Charge (Qg) of 3.3 nC at 4V and an Input Capacitance (Ciss) of 270 pF at 10V. With a maximum power dissipation of 200mW (Ta) and an operating junction temperature of 150°C, this device is suitable for demanding applications. The UPA621TT-E1-A is packaged in a compact 6-WSOF surface mount configuration, ideal for space-constrained designs in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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