UPA620TT-E1-A
MOSFET N-CH 20V 5A 6WSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation UPA620TT-E1-A is an N-channel MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 5 A at 25°C. With a low on-resistance (Rds On) of 38 mOhm at 2.5 A and 4.5 V, it minimizes conduction losses. The gate charge (Qg) is specified at a maximum of 5.5 nC at 4 V, contributing to efficient switching operation. Input capacitance (Ciss) is 450 pF at 10 V. The UPA620TT-E1-A is housed in a compact 6-WSOF (6-SMD, Flat Leads) surface-mount package, suitable for applications in consumer electronics and power management systems. The threshold voltage (Vgs(th)) is a maximum of 1.5 V at 1 mA. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-WSOF |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
