UPA2825T1S-E2-AT
MOSFET N-CH 30V 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation UPA2825T1S-E2-AT is an N-Channel power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 24A at 25°C (Tc). With a low on-resistance (Rds On) of 4.6mOhm maximum at 24A and 10V gate-source voltage, it offers efficient power handling. The UPA2825T1S-E2-AT is packaged in an 8-HWSON (3.3x3.3) surface mount configuration, suitable for compact designs. It operates across a wide temperature range up to 150°C (TJ) and supports drive voltages from 4.5V to 10V. Key parameters include a gate charge (Qg) of 57 nC maximum at 10V and input capacitance (Ciss) of 2600 pF maximum at 10V. This component is utilized in power management, automotive systems, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 16.5W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
HAT2173HWS-E
MOSFET N-CH 100V 25A 5LFPAK
NP40N10YDF-E1-AY
MOSFET N-CH 100V 40A 8HSON
