UPA2821T1L-E1-AT
MOSFET N-CH 30V 26A 8HWSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation UPA2821T1L-E1-AT is an N-Channel Power MOSFET designed for efficient power switching applications. This component offers a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 26A at 25°C (Tc). Key performance metrics include a low on-resistance of 3.8mOhm at 26A and 10V Vgs, and a maximum gate charge of 51 nC at 10V. The device features a maximum power dissipation of 1.5W (Ta) and operates at an ambient temperature up to 150°C (TJ). It is supplied in an 8-HWSON (3.3x3.3) package for surface mounting and is available on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2490 pF @ 10 V |
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