UPA2813T1L-E1-AT
MOSFET P-CH 30V 27A 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation P-Channel Power MOSFET, UPA2813T1L-E1-AT. This device features a 30V drain-source voltage and a continuous drain current of 27A at 25°C. The on-resistance (Rds On) is specified at a maximum of 6.2mOhm at 27A and 10V gate-source voltage. Key capacitances include input capacitance (Ciss) of 3130pF and gate charge (Qg) of 80nC, both measured at 10V. Power dissipation capabilities are 1.5W when measured at ambient temperature (Ta) and 52W when measured at case temperature (Tc). The component is provided in an 8-HVSON (3.3x3.3) surface mount package, supplied on tape and reel. This MOSFET is suitable for applications in power management and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HVSON (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 10 V |
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