UPA2812T1L-E1-AT
MOSFET P-CH 30V 30A 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2812T1L-E1-AT is a P-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 30 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 4.8 mOhm at 30 A and 10 V gate-source voltage. With a gate charge (Qg) of 100 nC at 10 V and input capacitance (Ciss) of 3740 pF at 10 V, the UPA2812T1L-E1-AT offers optimized switching characteristics. Power dissipation is rated at 1.5 W (Ta) and 52 W (Tc), with an operating junction temperature up to 150°C. The device is housed in an 8-HVSON (3.3x3.3) package, suitable for surface mounting. This MOSFET is utilized in industries such as automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HVSON (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3740 pF @ 10 V |
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