UPA2810T1L-E2-AY
MOSFET P-CH 30V 13A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2810T1L-E2-AY is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 13A at 25°C. The Rds On is specified at a maximum of 12mOhm when conducting 13A with a 10V Gate-to-Source Voltage. The UPA2810T1L-E2-AY is housed in an 8-DFN3333 (3.3x3.3) package with an exposed pad, facilitating efficient surface mounting. Key electrical parameters include an input capacitance (Ciss) of 1860pF (max) and a gate charge (Qg) of 40nC (max). Operating at a junction temperature up to 150°C, this device offers a maximum power dissipation of 1.5W. This MOSFET is suitable for use in automotive and industrial sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 10 V |
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