UPA2810T1L-E1-AY
MOSFET P-CH 30V 13A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation UPA2810T1L-E1-AY is a P-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C. With a low on-resistance (Rds On) of 12mOhm at 13A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 1.5W (Ta) and operates across an extended temperature range up to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 40nC (Max) at 10V and an input capacitance (Ciss) of 1860pF (Max) at 10V. The UPA2810T1L-E1-AY is housed in an 8-DFN3333 (3.3x3.3) surface-mount package with an exposed pad. This MOSFET is utilized in various industries including automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 10 V |
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