UPA2803T1L-E2-AY
MOSFET N-CH 20V 20A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's UPA2803T1L-E2-AY is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 20V Drain-Source Voltage (Vdss) and supports a continuous drain current (Id) of 20A at 25°C. The low on-resistance, specified as 5.8mOhm maximum at 20A and 4.5V Vgs, minimizes conduction losses. The UPA2803T1L-E2-AY has a gate charge (Qg) of 20 nC maximum at 4V Vgs and an input capacitance (Ciss) of 2450 pF maximum at 10V Vds. It is housed in a compact 8-DFN3333 (3.3x3.3) surface mount package with an exposed pad for enhanced thermal performance. This MOSFET is suitable for use in various industrial and consumer electronics, including power management and motor control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 10 V |
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