UPA2802T1L-E2-AY
MOSFET N-CH 20V 18A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation UPA2802T1L-E2-AY is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C (Ta). It is housed in a compact 8-DFN3333 (3.3x3.3) surface-mount package, offering excellent thermal performance with an exposed pad. Key electrical characteristics include a low on-resistance (Rds On) of 5.8mOhm at 18A and 10V, and a gate charge (Qg) of 16nC (Max) at 5V. The input capacitance (Ciss) is rated at 1800pF (Max) at 10V, with a threshold voltage (Vgs(th)) of 2.5V (Max) at 1mA. This device is suitable for use in power management solutions within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 10 V |
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