UPA2800T1L-E1-AY
MOSFET N-CH 30V 17A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2800T1L-E1-AY is an N-Channel MOSFET designed for high-efficiency power management applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 17A at 25°C (Ta). The UPA2800T1L-E1-AY utilizes advanced MOSFET technology and offers a low on-resistance of 7.3mOhm at 17A and 10V Vgs. Its typically low gate charge of 17nC at 5V and input capacitance of 1770pF at 15V contribute to efficient switching performance. Packaged in an 8-DFN3333 (3.3x3.3mm) surface-mount configuration with an exposed pad for enhanced thermal management, this device is well-suited for use in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 17A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 15 V |
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