UPA2766T1A-E2-AY
MOSFET N-CH 30V 130A 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2766T1A-E2-AY is an N-Channel Power MOSFET designed for high-current switching applications. This device features a 30 V drain-source voltage and a continuous drain current capability of 130 A at 25°C (Tc). The UPA2766T1A-E2-AY exhibits a low on-resistance of 1.82 mOhm maximum at 39 A and 4.5 V gate-source voltage. With a maximum junction temperature of 150°C, it offers significant power dissipation capabilities of 83 W (Tc). The MOSFET is housed in an 8-HVSON (5x5.4) package, suitable for surface mounting and delivered in tape and reel packaging. Typical applications include power management in automotive systems and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.82mOhm @ 39A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HVSON (5x5.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 257 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10850 pF @ 10 V |
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