UPA2765T1A-E2-AY
MOSFET N-CH 30V 100A 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation presents the UPA2765T1A-E2-AY, an N-Channel MOSFET designed for high-performance applications. This component features a 30V drain-source voltage and a continuous drain current capability of 100A (Ta) at 25°C. The UPA2765T1A-E2-AY offers a low on-resistance of 2.9mOhm at 32A and 4.5V gate-source voltage, with a maximum gate charge of 152 nC at 10V. It is packaged in an 8-HVSON (5x5.4) surface mount configuration, suitable for demanding thermal management with a maximum power dissipation of 1.5W (Ta) and 83W (Tc), and an operating junction temperature of 150°C. This device is commonly utilized in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 32A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HVSON (5x5.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6550 pF @ 10 V |
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