UPA2764T1A-E2-AY
MOSFET N-CH 30V 130A 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2764T1A-E2-AY is an N-Channel Power MOSFET designed for high-current applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 130A at 25°C. The UPA2764T1A-E2-AY offers a low on-resistance (Rds On) of 2.45mOhm maximum at 35A and 4.5V gate-source voltage. Its 8-HVSON (5x5.4) package facilitates efficient thermal management, with a maximum power dissipation of 1.5W at ambient temperature and 83W at case temperature. Key parameters include a gate charge (Qg) of 180 nC maximum at 10V and input capacitance (Ciss) of 7930 pF maximum at 10V. This device is suitable for applications in automotive, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.45mOhm @ 35A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HVSON (5x5.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7930 pF @ 10 V |
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