UPA2739T1A-E2-AY
MOSFET P-CH 30V 85A 8HVSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2739T1A-E2-AY is a P-Channel MOSFET designed for demanding power management applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 85A at 25°C. The low on-resistance of 5.7mOhm is achievable at 23A and a 4.5V gate-source voltage. With a maximum junction temperature of 150°C and a power dissipation of 1.5W, it is suited for operation in harsh environments. The device is housed in an 8-HVSON (5x5.4) package, facilitating efficient thermal management and high-density board layouts. Key electrical parameters include a gate charge of 153 nC at 10V and input capacitance of 6050 pF at 10V. This MOSFET is utilized in industries such as automotive and industrial automation for power switching and control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 23A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HVSON (5x5.4) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6050 pF @ 10 V |
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