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UPA2738GR-E1-AT

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UPA2738GR-E1-AT

MOSFET P-CH 30V 10A 8SOP

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation's UPA2738GR-E1-AT is a P-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. With a low on-resistance (Rds On) of 15mOhm at 10A and 10V gs, it minimizes conduction losses. The device supports a gate-source voltage range of ±20V and operates efficiently with drive voltages between 4.5V and 10V. Key capacitances include Ciss at 1450pF (max) and Qg at 37nC (max). The UPA2738GR-E1-AT is housed in a compact 8-SOP (8-PowerSOIC) package, suitable for surface mounting. Its maximum power dissipation is 1.1W (Ta), and it can operate at junction temperatures up to 150°C. This MOSFET is utilized across various industries including automotive and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSOIC (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 10 V

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