UPA2737GR-E1-AT
MOSFET P-CH 30V 11A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation UPA2737GR-E1-AT is a P-Channel MOSFET designed for efficient power switching. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C (Ta), with a maximum power dissipation of 1.1W (Ta). Its low on-resistance (Rds On) of 13mOhm at 11A and 10V gate-source voltage (Vgs) makes it suitable for applications requiring minimal conduction losses. The device is housed in an 8-SOP package, facilitating surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 45 nC and an input capacitance (Ciss) of 1750 pF, both specified at 10V Vgs and 10V Vds respectively. The operating temperature range extends to 150°C (TJ), and it supports a maximum Vgs of ±20V. This MOSFET is commonly utilized in power management circuits and various industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 10 V |
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