UPA2735GR-E1-AT
MOSFET P-CH 30V 16A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2735GR-E1-AT is a P-Channel Power MOSFET designed for high-current switching applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 16 A at 25°C (Ta). The ultra-low on-resistance (Rds On) of 5 mOhm at 16 A and 10 V Vgs ensures minimal power loss. The UPA2735GR-E1-AT is housed in a compact 8-SOP package, specifically an 8-PowerSOIC (4.40mm width), suitable for surface mounting. Key parameters include a gate charge (Qg) of 195 nC at 10 V and input capacitance (Ciss) of 6250 pF at 10 V. With a maximum operating junction temperature of 150°C and a maximum power dissipation of 1.1 W, this MOSFET is well-suited for power management solutions in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 10 V |
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