UPA2727UT1A-E1-AY
MOSFET N-CH 30V 16A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's UPA2727UT1A-E1-AY is a N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. The device is housed in a compact 8-DFN3333 (3.3x3.3mm) package with an exposed pad for enhanced thermal performance. Key electrical characteristics include a low on-resistance (Rds On) of 9.6mOhm at 8A and 10V, and a gate charge (Qg) of 11nC maximum at 5V. The input capacitance (Ciss) is 1170pF maximum at 15V, with a gate threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 8A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 15 V |
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