UPA2726UT1A-E1-AY
MOSFET N-CH 30V 20A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation UPA2726UT1A-E1-AY is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C ambient temperature. The low on-resistance of 7mOhm at 10A and 10V gate-source voltage minimizes conduction losses. Key characteristics include a gate charge of 15nC (max) at 5V and input capacitance of 1720pF (max) at 15V drain-source voltage. The UPA2726UT1A-E1-AY is housed in a compact 8-DFN3333 (3.3x3.3) surface mount package with an exposed pad for enhanced thermal performance. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1720 pF @ 15 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
