UPA2723UT1A-E1-AY
MOSFET N-CH 30V 33A 8DFNManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2723UT1A-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of 33A at 25°C. The UPA2723UT1A-E1-AY exhibits a low on-resistance (Rds On) of 2.5mOhm at 17A and 10V, ensuring high efficiency in power conversion. It has a gate charge (Qg) of 64 nC maximum at 5V and input capacitance (Ciss) of 8100 pF maximum at 10V. The device utilizes a Metal Oxide technology and is packaged in an 8-DFN3333 (3.3x3.3) surface mount configuration with an exposed pad for enhanced thermal performance. This MOSFET is suitable for use in power management, consumer electronics, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 17A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8100 pF @ 10 V |
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