UPA2720GR-E1-A
MOSFET N-CH 30V 14A 8PSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's UPA2720GR-E1-A is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 14A at 25°C. The UPA2720GR-E1-A offers a low on-resistance of 6.6mOhm, achieved at 7A and 10V gate-source voltage, minimizing conduction losses. Key electrical parameters include a gate charge of 27 nC (max) at 5V and input capacitance (Ciss) of 2800 pF (max) at 10V. The device utilizes advanced MOSFET technology and is housed in an 8-PSOP surface-mount package. This component is suitable for use in power management circuits across various industries, including automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
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