UPA2718AGR-E1-AT
MOSFET P-CH 30V 13A 8PSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation UPA2718AGR-E1-AT is a P-Channel MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C (Ta). Its low on-resistance (Rds On) is rated at 9mOhm at 6.5A and 10V, ensuring efficient power handling. Key parameters include a gate charge (Qg) of 67 nC maximum at 10V and input capacitance (Ciss) of 2810 pF maximum at 10V. The UPA2718AGR-E1-AT is housed in an 8-PSOP (8-SOIC) surface mount package, facilitating compact board designs. This component is suitable for use in automotive and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 6.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2810 pF @ 10 V |
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