UPA2716AGR-E1-AT
MOSFET P-CH 30V 14A 8PSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation P-Channel Power MOSFET, UPA2716AGR-E1-AT, designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C (Ta), with a power dissipation of 2W (Ta). The P-Channel MOSFET technology offers a low on-resistance of 7mOhm maximum at 7A, 10V (Id, Vgs). Key electrical characteristics include a gate charge (Qg) of 95 nC maximum at 10V and input capacitance (Ciss) of 3000 pF maximum at 10V. Mounted via surface mount technology, this component is housed in an 8-PSOP (8-SOIC) package, measuring 4.40mm in width. Operating temperature range extends to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-PSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 10 V |
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