UPA2709AGR-E1-AT
MOSFET N-CH 30V 13A 8PSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2709AGR-E1-AT is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 13 A at 25°C. The low on-resistance is specified as 10.5 mOhm maximum at 7 A and 10 V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 11 nC maximum at 5 V and an input capacitance (Ciss) of 1270 pF maximum at 10 V drain-source voltage. The UPA2709AGR-E1-AT is housed in an 8-PSOP package, suitable for surface mounting. This component finds application in power management, automotive systems, and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 10 V |
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