UPA2701GR-E1-AT
MOSFET N-CH 30V 14A 8PSOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2701GR-E1-AT is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 14A at 25°C. With a low on-resistance (Rds(On)) of 7.5mOhm at 7A and 10V, it minimizes conduction losses. The gate charge (Qg) is specified at a maximum of 12 nC at 5V, and input capacitance (Ciss) is 1200 pF at 10V, facilitating fast switching speeds. The UPA2701GR-E1-AT is housed in an 8-PSOP package, suitable for surface mounting. This MOSFET is commonly deployed in power management circuits, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 7A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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