UPA2680T1E-E2-AT
MOSFET N-CH 20V 3A 6MLPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2680T1E-E2-AT is a N-Channel Power MOSFET featuring a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. This component utilizes MOSFET technology and is housed in a compact 6-MLP (3x3) surface mount package. Key electrical characteristics include a maximum on-resistance (Rds On) of 50mOhm at 3A and 10V, a gate charge (Qg) of 3.1 nC at 4.5V, and input capacitance (Ciss) of 190 pF at 10V. The device also incorporates an isolated Schottky diode. This MOSFET is commonly employed in power management applications within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 6-MLP (3x3) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 10 V |
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