UPA2521T1H-T2-AT
MOSFET N-CH 30V 8A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation UPA2521T1H-T2-AT is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 8 A at 25°C, with a maximum power dissipation of 1 W. The UPA2521T1H-T2-AT exhibits a low on-resistance of 16.5 mOhm at 8 A and 10 V, coupled with a gate charge (Qg) of 7.6 nC at 5 V. Input capacitance (Ciss) is specified at 780 pF at 15 V. Operating at junction temperatures up to 150°C, this MOSFET utilizes a surface mount 8-VSOF package. Its characteristics make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
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