UPA2521T1H-T1-AT
MOSFET N-CH 30V 8A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's UPA2521T1H-T1-AT is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C, with a maximum power dissipation of 1W (Ta). The device exhibits a low on-resistance (Rds On) of 16.5mOhm at 8A and 10V, minimizing conduction losses. Key characteristics include a gate charge (Qg) of 7.6 nC (Max) at 5V and input capacitance (Ciss) of 780 pF (Max) at 15V. The UPA2521T1H-T1-AT is housed in a compact 8-VSOF surface-mount package, suitable for demanding thermal management. This MOSFET is utilized in power management solutions, automotive electronics, and industrial control systems. The threshold voltage (Vgs(th)) is 2.5V (Max) at 1mA.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 15 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
RJK1001DPN-E0#T2
MOSFET N-CH 100V 80A TO220AB
