UPA2520T1H-T2-AT
MOSFET N-CH 30V 10A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation N-Channel Power MOSFET, part number UPA2520T1H-T2-AT, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C ambient. This device features a low on-resistance of 13.2mOhm maximum at 10A and 10V Vgs, facilitating efficient power switching. With a gate charge of 10.8 nC at 5V Vgs and input capacitance of 1100 pF at 15V Vds, it is suitable for various power management applications. The device is housed in an 8-VSOF surface mount package, designed for optimal thermal performance with a power dissipation of 1W (Ta) and an operating junction temperature up to 150°C. This component finds application in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.2mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
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