UPA2520T1H-T1-AT
MOSFET N-CH 30V 10A 8VSOFManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's UPA2520T1H-T1-AT is a 30V N-Channel MOSFET designed for surface mount applications. This component offers a continuous drain current of 10A at 25°C with a maximum power dissipation of 1W. Key electrical characteristics include a low on-resistance of 13.2mOhm at 10A and 10V, a gate charge of 10.8 nC at 5V, and an input capacitance of 1100 pF at 15V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. Packaged in an 8-VSOF (8-SMD, Flat Lead) configuration, this MOSFET operates within an ambient temperature range up to 150°C. Its specifications make it suitable for various industrial and automotive power management applications.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.2mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-VSOF |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
