UPA2463T1Q-E1-AX
MOSFET N-CH 20V 6A 8HUSONManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation UPA2463T1Q-E1-AX is a surface-mount N-Channel MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. With a low on-resistance of 20mOhm at 3A and 10V Vgs, it minimizes conduction losses. The UPA2463T1Q-E1-AX has a gate charge of 7nC (max) at 4V Vgs and an input capacitance of 680pF (max) at 10V Vds. It is packaged in an 8-HUSON (2.7x2) with an exposed pad, offering efficient thermal management with a maximum power dissipation of 1W (Ta) and an operating junction temperature of 150°C. This MOSFET is utilized in power management, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-HUSON (2.7x2) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
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